NSN 5961-01-338-1286 VQ1000P-7/883B, VQ1000P7883B, 01-338-1286
Product Details | UNITIZED SEMICONDUCTOR DEVICES
5961-01-338-1286 Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
Part Alternates: VQ1000P-7/883B, VQ1000P7883B, 5961-01-338-1286, 01-338-1286, 5961013381286, 013381286
Electrical and Electronic Equipment Components | Semiconductor Devices and Associated Hardware
Supply Group (FSG) | NSN Assign. | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | 26 APR 1991 | 01-338-1286 | 61962 ( SEMICONDUCTOR DEVICES, UNITIZED ) |
Cross Reference | NSN 5961-01-338-1286
Part Number | Cage Code | Manufacturer |
---|---|---|
VQ1000P-7/883B | 17856 | SILICONIX INCORPORATED DIV SILICONIX |
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Technical Data | NSN 5961-01-338-1286
Characteristic | Specifications |
---|---|
COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE | N-CHANNEL INSULATED GATE TYPE ALL TRANSISTOR |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR |
CURRENT RATING PER CHARACTERISTIC | 0.23 AMPERES MAXIMUM DRAIN CURRENT AND 1.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK ALL TRANSISTOR |
POWER RATING PER CHARACTERISTIC | 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | CERAMIC OR PLASTIC |
MOUNTING METHOD | TERMINAL |
TERMINAL TYPE AND QUANTITY | 14 PIN |
FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
Restrictions/Controls & Freight Information | NSN 5961-01-338-1286
Category | Code | Description |
---|---|---|
Hazardous Material Indicator Code | N | There is no data in the HMIS and the NSN is in an FSC not generally suspected of containing hazardous materials |
Demilitarization Code: | D | Munitions List Item or Commerce Control List Item. Demilitarization required. Total destruction of the item and components so as to preclude restoration or repair to a usable condition by melting, cutting, tearing, scratching, crushing, breaking, punching, neutralizing, etc. (As an alternate, burial or deep water dumping may be used when coordinated with the DoD Demilitarization Program Office.) |
Electro-static Discharge Susceptible: | A | No known Electrostatic Discharge (ESD) or Electromagnetic Interference (EMI) sensitivity |
Precious Metals Indicator Code: | U | Precious metal type is unknown |
Criticality Code: | X | The item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. |
Category | Code | Description |
---|---|---|
No Freight Information |