NSN 5961-01-336-6509 01-336-6509, 013366509
Product Details | UNITIZED SEMICONDUCTOR DEVICES
5961-01-336-6509 Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
Part Alternates: 5961-01-336-6509, 01-336-6509, 5961013366509, 013366509
Electrical and Electronic Equipment Components | Semiconductor Devices and Associated Hardware
Supply Group (FSG) | NSN Assign. | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | 01-336-6509 | 61962 ( SEMICONDUCTOR DEVICES, UNITIZED ) |
Cross Reference | NSN 5961-01-336-6509
Part Number | Cage Code | Manufacturer |
---|---|---|
311982-001 | 63516 | L-3 COMMUNICATIONS CORPORATION DBA L3 COMMUNICATIONS DISPLAY |
SV803438-1 | 73030 | HAMILTON SUNDSTRAND CORPORATION |
V01001P | 17856 | SILICONIX INCORPORATED DIV SILICONIX |
VQ1001P | 17856 | SILICONIX INCORPORATED DIV SILICONIX |
VQ1001P-2 | 17856 | SILICONIX INCORPORATED DIV SILICONIX |
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Technical Data | NSN 5961-01-336-6509
Characteristic | Specifications |
---|---|
COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE | N-CHANNEL JUNCTION TYPE 1ST TRANSISTOR P-CHANNEL INSULATED GATE TYPE 2ND TRANSISTOR |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR |
CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK ALL TRANSISTOR |
POWER RATING PER CHARACTERISTIC | 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | CERAMIC |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 0.100 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 14 PIN |
OVERALL LENGTH | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
OVERALL HEIGHT | 0.220 INCHES MAXIMUM |
OVERALL WIDTH | 0.325 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |
Restrictions/Controls & Freight Information | NSN 5961-01-336-6509
Category | Code | Description |
---|---|---|
Hazardous Material Indicator Code | N | There is no data in the HMIS and the NSN is in an FSC not generally suspected of containing hazardous materials |
Electro-static Discharge Susceptible: | B | ESD sensitivity |
Category | Code | Description |
---|---|---|
No Freight Information |