Product Details | UNITIZED SEMICONDUCTOR DEVICES

5961-01-336-6509 Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Part Alternates: 5961-01-336-6509, 01-336-6509, 5961013366509, 013366509

Electrical and Electronic Equipment Components | Semiconductor Devices and Associated Hardware

Supply Group (FSG) NSN Assign. NIIN
59 01-336-6509

Cross Reference | NSN 5961-01-336-6509

Part Number Cage Code Manufacturer
311982-001 63516 L-3 COMMUNICATIONS CORPORATION DBA L3 COMMUNICATIONS DISPLAY
SV803438-1 73030 HAMILTON SUNDSTRAND CORPORATION
V01001P 17856 SILICONIX INCORPORATED DIV SILICONIX
VQ1001P 17856 SILICONIX INCORPORATED DIV SILICONIX
VQ1001P-2 17856 SILICONIX INCORPORATED DIV SILICONIX

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Technical Data | NSN 5961-01-336-6509

Characteristic Specifications
COMPONENT NAME AND QUANTITY 4 TRANSISTOR
SEMICONDUCTOR MATERIAL SILICON ALL TRANSISTOR
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE N-CHANNEL JUNCTION TYPE 1ST TRANSISTOR P-CHANNEL INSULATED GATE TYPE 2ND TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
CURRENT RATING PER CHARACTERISTIC 3.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL CERAMIC
MOUNTING METHOD TERMINAL
TERMINAL LENGTH 0.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY 14 PIN
OVERALL LENGTH 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL HEIGHT 0.220 INCHES MAXIMUM
OVERALL WIDTH 0.325 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE

Restrictions/Controls & Freight Information | NSN 5961-01-336-6509

Category Code Description
Hazardous Material Indicator CodeNThere is no data in the HMIS and the NSN is in an FSC not generally suspected of containing hazardous materials
Electro-static Discharge Susceptible:BESD sensitivity
Category Code Description
No Freight Information