Product Details | DIODE SEMICONDUCTOR DEVICE

5961-00-761-3857 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Part Alternates: MA41431, MIL-S-19500/229, MILS19500229, USN1N830AM, UXAN1N830A, JAN1N830A, 019005893001, 019-005893-001, 1047634P1, 5800583-926200.111, 5800583926200111, 5961-00-761-3857, 00-761-3857, 5961007613857, 007613857

Electrical and Electronic Equipment Components | Semiconductor Devices and Associated Hardware

Supply Group (FSG) NSN Assign. NIIN
59 01 JAN 1960 00-761-3857

Demand History | NSN 5961-00-761-3857

Part Number Request Date QTY Origin
5961-00-761-3857 2013-10-276 18 DIBBS
5961-00-761-3857 2013-01-03 12 DIBBS
5961-00-761-3857 2011-07-203 20 DIBBS
5961-00-761-3857 2011-06-180 10 DIBBS
5961-00-761-3857 2010-02-36 16 DIBBS
5961-00-761-3857 2010-01-08 13 DIBBS
5961-00-761-3857 2008-09-263 22 DIBBS
5961-00-761-3857 2007-08-220 23 DIBBS
5961-00-761-3857 2007-07-205 33 DIBBS
5961-00-761-3857 2007-06-166 32 DIBBS
5961-00-761-3857 2007-05-138 48 DIBBS
5961-00-761-3857 2007-03-74 25 DIBBS
5961-00-761-3857 2007-01-26 19 DIBBS

Cross Reference | NSN 5961-00-761-3857

Part Number Cage Code Manufacturer
019-005893-001 26916 NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
1047634P1 94117 BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
1N830 93321 FIBRE PRODUCTS DIVISION OF IKELHEIMER-ERNST INC
5800583-926200.111 C0426 AIRBUS DEFENCE AND SPACE GMBHELECTRONICS
617952-1 37695 RAYTHEON COMPANY DBA RAYTHEON
JAN1N830A 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
MA41431 96341 COBHAM ELECTRONIC SYSTEMS INC. DBA COBHAM DEFENSE ELECTRONICS
MIL-S-19500/229 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
USN1N830AM 81350 JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS
UXAN1N830A 0EFF4 MICROMETRICS INC
UXAN1N830A 3BBY6 SEMI-GENERAL, INC.

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Technical Data | NSN 5961-00-761-3857

Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 2.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
CURRENT RATING PER CHARACTERISTIC 25.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL GLASS
MOUNTING METHOD TERMINAL
TERMINAL LENGTH 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
OVERALL LENGTH 0.300 INCHES MAXIMUM
OVERALL DIAMETER 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
TEST DATA DOCUMENT 81349-MIL-S-19500 SPECIFICATION
(NON-CORE DATA) SPECIFICATION/STANDARD DATA 81349-MIL-S-19500/229 GOVERNMENT SPECIFICATION

Restrictions/Controls & Freight Information | NSN 5961-00-761-3857

Category Code Description
Shelf-Life Code:0Nondeteriorative
Hazardous Material Indicator CodeNThere is no data in the HMIS and the NSN is in an FSC not generally suspected of containing hazardous materials
Demilitarization Code:ANon-Munitions List Item/ Non-Strategic List Item - Demilitarization not required.
Controlled Inventory Item Code:UUNCLASSIFIED
Electro-static Discharge Susceptible:BESD sensitivity
Precious Metals Indicator Code:AItem does not contain precious metal
Criticality Code:X The item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Category Code Description
No Freight Information