Product Details | TRANSISTOR

5961-00-576-4978 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Part Alternates: 5961-00-576-4978, 00-576-4978, 5961005764978, 005764978

Electrical and Electronic Equipment Components | Semiconductor Devices and Associated Hardware

Supply Group (FSG) NSN Assign. NIIN
59 00-576-4978

Cross Reference | NSN 5961-00-576-4978

Part Number Cage Code Manufacturer
145530-10 24930 EXELIS INC. DBA RADAR, RECONNAISSANCE & UNDERSEA
207005P1 94117 BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
239A8503PC2 24374 BECHTEL TECHNICAL SERVICES INC MACHINERY APPARATUS OPN
2N916 04713 FREESCALE SEMICONDUCTOR, INC.
2N916 07688 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
2N916 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
2N916 81350 JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS
352-7500-010 13499 ROCKWELL COLLINS, INC. DBA GOVERNMENT SYSTEMS
434318 1PQF4 L-3 COMMUNICATIONS CORPORATION DBA LINK SIMULATION & TRAINING
8505206-1 23302 S W ELECTRONICS & MANUFACTURING CORP DBA SWEMCO
8505206-1 49671 LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS
947063-9160 13973 LITTON SYSTEMS INC. DIV NAVIGATION SYSTEMS DIVISION
JAN2N916 04713 FREESCALE SEMICONDUCTOR, INC.
JAN2N916 07263 FAIRCHILD SEMICONDUCTOR CORP
JAN2N916 3B150 RAYTHEON TECHNICAL SERVICES COMPANY LLC
JAN2N916 49956 RAYTHEON COMPANY DBA RAYTHEON
JAN2N916 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
JAN2N916 81350 JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS
L01659 16236 DLA LAND AND MARITIME
MILS19500-271 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
SM0295 01295 TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS

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Technical Data | NSN 5961-00-576-4978

Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTIC 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
POWER RATING PER CHARACTERISTIC 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH 0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
OVERALL LENGTH 0.210 INCHES MAXIMUM
OVERALL DIAMETER 0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURES ITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO. L01659; JUNCTION PATTERN ARRANGEMENT: NPN
CRITICALITY CODE JUSTIFICATION FEAT

Restrictions/Controls & Freight Information | NSN 5961-00-576-4978

Category Code Description
Hazardous Material Indicator CodeNThere is no data in the HMIS and the NSN is in an FSC not generally suspected of containing hazardous materials
Category Code Description
No Freight Information